J.L. Ropero–Vega, A.M. Meléndez, J.A. Pedraza–Avella, R.J. Candal, M.E. Niño–Gómez. Mixed oxide semiconductors based on bismuth for photoelectrochemical applications. J. Solid State Electrochem. 18 (2014) 1963–1971.

The structural and photoelectrochemical properties of Bi–Nb–M–O (M = Al, Fe, Ga, In) mixed oxide semiconductor films were studied in order to explore their use as photoanodes.


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Información adicional

País:     Alemania

Autor(es):   

Año:     2014

ISSN:    1433-0768

Revista:    Journal of Solid State Electrochemistry

Editorial:    Springer

Grupo(s):

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